All IGBT. SSIG20N135H Datasheet

 

SSIG20N135H IGBT. Datasheet pdf. Equivalent


   Type Designator: SSIG20N135H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 192 nC
   Package: TO247

 SSIG20N135H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SSIG20N135H Datasheet (PDF)

 ..1. Size:614K  silikron
 ssig20n135h.pdf

SSIG20N135H SSIG20N135H

SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

Datasheet: FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , FGH40N60UFD , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM .

 

 
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