All IGBT. SSIG20N135H Datasheet

 

SSIG20N135H Datasheet and Replacement


   Type Designator: SSIG20N135H
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 310 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO247
      - IGBT Cross-Reference

 

SSIG20N135H Datasheet (PDF)

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SSIG20N135H

SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

Datasheet: FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , GT30J124 , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM .

History: BRG25N120D | IRGR3B60KD2 | HGTG40N60A4 | FGH20N60UFD | GT45G128 | F3L30R06W1E3_B11 | IRG4PH40UD

Keywords - SSIG20N135H transistor datasheet

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