SSIG20N135H Datasheet. Specs and Replacement
Type Designator: SSIG20N135H 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO247
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SSIG20N135H datasheet
ssig20n135h.pdf
SSIG20N135H Main Product Characteristics VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100 C Schema t ic d iagr am TO-247 Features and Benefits Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co... See More ⇒
Specs: FGW75N60HD, FGW85N60RB, 1MBH60-100, FGL40N120AN, BRG15N120D, BRG20N120D, BRG25N120D, SSIG15N135H, CRG40T60AN3H, BT25T120ANF, BT15T120ANF, BT15N120ANF, BT40N60BNF, BT30N60ANF, BT50N60ANF, BT15N60A9F, AP25G45EM
Keywords - SSIG20N135H transistor spec
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History: APT15GP60BDF1 | AP20G45EH | IXGP50N60C4 | KGF75N60KDB | BRG20N120D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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