SSIG20N135H Datasheet and Replacement
Type Designator: SSIG20N135H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 70 pF
Qg ⓘ - Total Gate Charge, typ: 192 nC
Package: TO247
SSIG20N135H substitution
SSIG20N135H Datasheet (PDF)
ssig20n135h.pdf
SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co
Datasheet: FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , GT30J124 , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM .
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