BT25T120ANF IGBT. Datasheet pdf. Equivalent
Type Designator: BT25T120ANF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 82 pF
Qgⓘ - Total Gate Charge, typ: 177 nC
Package: TO3P
BT25T120ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search
BT25T120ANF Datasheet (PDF)
bt25t120anf.pdf
Silicon FS Planar IGBT R BT25T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features Trench FS Technology, Positive temperature coef
bt25t120anf.pdf
Silicon FS Planar IGBT R BT25T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features Trench FS Technology, Positive temperature coef
bt25t120ckr.pdf
Silicon FS Trench IGBT RBT25T120 CKR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness.Features Trench FS T
Datasheet: FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , FGH40N60SFD , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM .
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