BT15N120ANF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

BT15N120ANF Specs and Replacement

Type Designator: BT15N120ANF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 186 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 38.4 nS

Coesⓘ - Output Capacitance, typ: 67 pF

Package: TO3P

BT15N120ANF Substitution

- IGBT ⓘ Cross-Reference Search

BT15N120ANF datasheet

..1. Size:254K crhj
bt15n120anf.pdf pdf_icon

Silicon FS Planar IGBT R BT15N120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features Trench FS Technology, Positive temperature coef... See More ⇒

..2. Size:253K wuxi china
bt15n120anf.pdf pdf_icon

8.1. Size:155K 1
ixbh15n170 ixbt15n170.pdf pdf_icon

Advanced Technical Information VCES = 1700 V High Voltage, High Gain IXBH 15N170 BIMOSFETTM Monolithic IC25 = 25 A IXBT 15N170 Bipolar MOS Transistor VCE(sat) = 3.3 V Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C25 A TO-24... See More ⇒

9.1. Size:102K crhj
bt15n60a9f.pdf pdf_icon

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff... See More ⇒