All IGBT. BT15N120ANF Datasheet

 

BT15N120ANF IGBT. Datasheet pdf. Equivalent

Type Designator: BT15N120ANF

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 186

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 38.4

Maximum Collector Capacity (Cc), pF: 67

Package: TO3PN

BT15N120ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT15N120ANF Datasheet (PDF)

1.1. bt15n120anf.pdf Size:253K _igbt_a

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

1.2. bt15n120anf.pdf Size:254K _crhj

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

5.1. bt15n60a9f.pdf Size:102K _igbt_a

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

5.2. bt15n60a9f.pdf Size:102K _crhj

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

Datasheet: FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , IXGR40N60C2D1 , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH .

 


BT15N120ANF
  BT15N120ANF
  BT15N120ANF
  BT15N120ANF
 
BT15N120ANF
  BT15N120ANF
  BT15N120ANF
  BT15N120ANF
 

social 

LIST

Last Update

IGBT: BSM50GP60 | BSM50GP120 | BSM50GD60DLC_E3226 | BSM50GD60DLC | BSM50GD170DL | BSM50GD120DN2G | BSM50GD120DN2E3226 | BSM50GD120DN2 | BSM50GD120DLC | BSM50GB60DLC |

Enter a full or partial SMD code with a minimum of 2 letters or numbers