All IGBT. BT40N60BNF Datasheet

 

BT40N60BNF Datasheet and Replacement


   Type Designator: BT40N60BNF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 169 pF
   Qg ⓘ - Total Gate Charge, typ: 94 nC
   Package: TO3P
 

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BT40N60BNF Datasheet (PDF)

 ..1. Size:106K  crhj
 bt40n60bnf.pdf pdf_icon

BT40N60BNF

Silicon FS Planar IGBT R BT40N60BNF General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features FS Planar Technology, Positive temperature

 ..2. Size:105K  wuxi china
 bt40n60bnf.pdf pdf_icon

BT40N60BNF

Silicon FS Planar IGBT R BT40N60BNF General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features FS Planar Technology, Positive temperature

Datasheet: BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , FGD4536 , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ .

Keywords - BT40N60BNF transistor datasheet

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