BT40N60BNF Datasheet. Specs and Replacement

Type Designator: BT40N60BNF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 312 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 47 nS

Coesⓘ - Output Capacitance, typ: 169 pF

Package: TO3P

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BT40N60BNF datasheet

 ..1. Size:106K  crhj
 bt40n60bnf.pdf pdf_icon

BT40N60BNF

Silicon FS Planar IGBT R BT40N60BNF General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features FS Planar Technology, Positive temperature... See More ⇒

 ..2. Size:105K  wuxi china
 bt40n60bnf.pdf pdf_icon

BT40N60BNF

Silicon FS Planar IGBT R BT40N60BNF General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 40 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.2 V Features FS Planar Technology, Positive temperature... See More ⇒

Specs: BRG15N120D, BRG20N120D, BRG25N120D, SSIG15N135H, SSIG20N135H, BT25T120ANF, BT15T120ANF, BT15N120ANF, GT30J127, BT30N60ANF, BT50N60ANF, BT15N60A9F, AP25G45EM, AP25G45GEM, AP28G45GEM, AP20G45EH, AP20G45EJ

Keywords - BT40N60BNF transistor spec

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