All IGBT. AP20G45EJ Datasheet

 

AP20G45EJ IGBT. Datasheet pdf. Equivalent


   Type Designator: AP20G45EJ
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 20 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 130(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 72 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Qgⓘ - Total Gate Charge, typ: 51 nC
   Package: TO251

 AP20G45EJ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP20G45EJ Datasheet (PDF)

 ..1. Size:71K  ape
ap20g45eh ap20g45ej.pdf

AP20G45EJ
AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 ..2. Size:69K  ape
ap20g45ej.pdf

AP20G45EJ
AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 6.1. Size:69K  ape
ap20g45eh.pdf

AP20G45EJ
AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 9.1. Size:59K  ape
ap20gt60p-hf.pdf

AP20G45EJ
AP20G45EJ

AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi

 9.2. Size:95K  ape
ap20gt60asp-hf.pdf

AP20G45EJ
AP20G45EJ

AP20GT60ASP-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 19AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.7V@IC=19A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol

 9.3. Size:60K  ape
ap20gt60sw.pdf

AP20G45EJ
AP20G45EJ

AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter V

 9.4. Size:93K  ape
ap20gt60i.pdf

AP20G45EJ
AP20G45EJ

AP20GT60IRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.8V@IC=20AC RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol

 9.5. Size:92K  ape
ap20gt60w.pdf

AP20G45EJ
AP20G45EJ

AP20GT60WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),typ.=1.8V@IC=20ACG RoHS Compliant ProductGCTO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltag

 9.6. Size:95K  ape
ap20gt60asi-hf.pdf

AP20G45EJ
AP20G45EJ

AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter

Datasheet: BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , IXGH60N60 , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K .

 

 
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