All IGBT. AP20G45EJ Datasheet

 

AP20G45EJ Datasheet and Replacement


   Type Designator: AP20G45EJ
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 20 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 130(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 72 nS
   Coesⓘ - Output Capacitance, typ: 145 pF
   Qg ⓘ - Total Gate Charge, typ: 51 nC
   Package: TO251
 

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AP20G45EJ Datasheet (PDF)

 ..1. Size:71K  ape
 ap20g45eh ap20g45ej.pdf pdf_icon

AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 ..2. Size:69K  ape
 ap20g45ej.pdf pdf_icon

AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 6.1. Size:69K  ape
 ap20g45eh.pdf pdf_icon

AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 9.1. Size:59K  ape
 ap20gt60p-hf.pdf pdf_icon

AP20G45EJ

AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi

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Datasheet: BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , SGT40N60NPFDPN , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K .

Keywords - AP20G45EJ transistor datasheet

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