AP20G45EJ
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AP20G45EJ
Тип транзистора: IGBT + Built-in Zener Diodes
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 20
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 450
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 6
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
130(pulse)
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
5
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 1.2
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 72
nS
Coesⓘ - Выходная емкость, типовая: 145
pF
Qgⓘ - Общий заряд затвора, typ: 51
nC
Тип корпуса:
TO251
Аналог (замена) для AP20G45EJ
AP20G45EJ
Datasheet (PDF)
..1. Size:71K ape
ap20g45eh ap20g45ej.pdf AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag
..2. Size:69K ape
ap20g45ej.pdf AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag
6.1. Size:69K ape
ap20g45eh.pdf AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag
9.1. Size:59K ape
ap20gt60p-hf.pdf AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi
9.2. Size:95K ape
ap20gt60asp-hf.pdf AP20GT60ASP-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 19AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.7V@IC=19A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol
9.3. Size:60K ape
ap20gt60sw.pdf AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter V
9.4. Size:93K ape
ap20gt60i.pdf AP20GT60IRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.8V@IC=20AC RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol
9.5. Size:92K ape
ap20gt60w.pdf AP20GT60WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),typ.=1.8V@IC=20ACG RoHS Compliant ProductGCTO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltag
9.6. Size:95K ape
ap20gt60asi-hf.pdf AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter
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