AP20G45EJ - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AP20G45EJ
Тип транзистора: IGBT + Built-in Zener Diodes
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 20
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 450
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 6
Максимальный постоянный ток коллектора |Ic| @25℃, A: 130(pulse)
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 5
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 1.2
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 72
Емкость коллектора типовая (Cc), pf: 145
Общий заряд затвора (Qg), typ, nC: 51
Тип корпуса: TO251
AP20G45EJ Datasheet (PDF)
ap20g45eh ap20g45ej.pdf
AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag
ap20g45ej.pdf
AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag
ap20g45eh.pdf
AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag
ap20gt60p-hf.pdf
AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi
ap20gt60asp-hf.pdf
AP20GT60ASP-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 19AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.7V@IC=19A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol
ap20gt60sw.pdf
AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter V
ap20gt60i.pdf
AP20GT60IRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.8V@IC=20AC RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol
ap20gt60w.pdf
AP20GT60WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),typ.=1.8V@IC=20ACG RoHS Compliant ProductGCTO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltag
ap20gt60asi-hf.pdf
AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter
Другие IGBT... BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , SGT50T65FD1PT , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K .
Список транзисторов
Обновления
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