Справочник IGBT. AP20G45EJ

 

AP20G45EJ - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AP20G45EJ
   Тип транзистора: IGBT + Built-in Zener Diodes
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 20
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 450
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 6
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 130(pulse)
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 5
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 1.2
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 72
   Емкость коллектора типовая (Cc), pf: 145
   Общий заряд затвора (Qg), typ, nC: 51
   Тип корпуса: TO251

 Аналог (замена) для AP20G45EJ

 

 

AP20G45EJ Datasheet (PDF)

 ..1. Size:71K  ape
 ap20g45eh ap20g45ej.pdf

AP20G45EJ AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 ..2. Size:69K  ape
 ap20g45ej.pdf

AP20G45EJ AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 6.1. Size:69K  ape
 ap20g45eh.pdf

AP20G45EJ AP20G45EJ

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltag

 9.1. Size:59K  ape
 ap20gt60p-hf.pdf

AP20G45EJ AP20G45EJ

AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi

 9.2. Size:95K  ape
 ap20gt60asp-hf.pdf

AP20G45EJ AP20G45EJ

AP20GT60ASP-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 19AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.7V@IC=19A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol

 9.3. Size:60K  ape
 ap20gt60sw.pdf

AP20G45EJ AP20G45EJ

AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter V

 9.4. Size:93K  ape
 ap20gt60i.pdf

AP20G45EJ AP20G45EJ

AP20GT60IRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.8V@IC=20AC RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol

 9.5. Size:92K  ape
 ap20gt60w.pdf

AP20G45EJ AP20G45EJ

AP20GT60WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),typ.=1.8V@IC=20ACG RoHS Compliant ProductGCTO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltag

 9.6. Size:95K  ape
 ap20gt60asi-hf.pdf

AP20G45EJ AP20G45EJ

AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter

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