All IGBT. AP05G120NSW-HF Datasheet

 

AP05G120NSW-HF IGBT. Datasheet pdf. Equivalent


   Type Designator: AP05G120NSW-HF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 125
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 21
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 65
   Total Gate Charge (Qg), typ, nC: 33
   Package: TO3P

 AP05G120NSW-HF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP05G120NSW-HF Datasheet (PDF)

 ..1. Size:62K  ape
 ap05g120nsw-hf.pdf

AP05G120NSW-HF AP05G120NSW-HF

AP05G120NSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features VCES 1200V High Speed Switching IC 10.5A NPT Technology RoHS Compliant & Halogen-FreeGCTO-3PEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 VVGE Gate-Emitter Voltage +30 VIC@TC=25 Col

 6.1. Size:62K  ape
 ap05g120sw-hf.pdf

AP05G120NSW-HF AP05G120NSW-HF

AP05G120SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 10.5AVCE(sat)=2.3V@IC=5AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

Datasheet: IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , IKW50N60H3 , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG .

 

 
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