AP05G120NSW-HF Datasheet. Specs and Replacement

Type Designator: AP05G120NSW-HF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 21 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO3P

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AP05G120NSW-HF datasheet

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 ap05g120nsw-hf.pdf pdf_icon

AP05G120NSW-HF

AP05G120NSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features VCES 1200V High Speed Switching IC 10.5A NPT Technology RoHS Compliant & Halogen-Free G C TO-3P E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-Emitter Voltage +30 V IC@TC=25 Col... See More ⇒

 6.1. Size:62K  ape
 ap05g120sw-hf.pdf pdf_icon

AP05G120NSW-HF

AP05G120SW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 10.5A VCE(sat)=2.3V@IC=5A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter ... See More ⇒

Specs: IRGSL4B60K, NGTB15N60S1, NGTG15N60S1, NGTB15N60EG, IXYY8N90C3, STGP19NC60K, AP05G120SW-HF, TSG10N120CN, IRGP4063D, AP20GT60SW, AP20GT60W, CI15T60, MMIX4B12N300, NGD8205A, IXYA8N90C3D1, IXYP8N90C3D1, APT20GN60BG

Keywords - AP05G120NSW-HF transistor spec

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