All IGBT. IXYP8N90C3D1 Datasheet

 

IXYP8N90C3D1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXYP8N90C3D1

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 900

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 20

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.15

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 20

Collector Capacity (Cc), typ, pF: 30

Package: TO220

IXYP8N90C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYP8N90C3D1 Datasheet (PDF)

 ..1. Size:336K  ixys
 ixyp8n90c3d1.pdf

IXYP8N90C3D1 IXYP8N90C3D1

Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYA8N90C3D1GenX3TM w/Diode IC110 = 8AIXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V

 4.1. Size:178K  ixys
 ixyp8n90c3.pdf

IXYP8N90C3D1 IXYP8N90C3D1

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYY8N90C3GenX3TM IC110 = 8AIXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-252 (IXYY)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VTO-220 (IXYP)VG

Datasheet: TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IKW30N60H3 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U .

 

 
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