All IGBT. IXYP8N90C3D1 Datasheet

 

IXYP8N90C3D1 Datasheet and Replacement


   Type Designator: IXYP8N90C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Package: TO220
      - IGBT Cross-Reference

 

IXYP8N90C3D1 Datasheet (PDF)

 ..1. Size:336K  ixys
 ixyp8n90c3d1.pdf pdf_icon

IXYP8N90C3D1

Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYA8N90C3D1GenX3TM w/Diode IC110 = 8AIXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V

 4.1. Size:178K  ixys
 ixyp8n90c3.pdf pdf_icon

IXYP8N90C3D1

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYY8N90C3GenX3TM IC110 = 8AIXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-252 (IXYY)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VTO-220 (IXYP)VG

Datasheet: TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , SGT40N60FD2PN , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U .

History: APT68GA60B | OST90N60HCZF | IRG4PH40KD | GT10G131 | IRG4RC10K | STGB3NB60HD | SGP15N60

Keywords - IXYP8N90C3D1 transistor datasheet

 IXYP8N90C3D1 cross reference
 IXYP8N90C3D1 equivalent finder
 IXYP8N90C3D1 lookup
 IXYP8N90C3D1 substitution
 IXYP8N90C3D1 replacement

 

 
Back to Top

 


 
.