IXYP8N90C3D1 Datasheet. Specs and Replacement

Type Designator: IXYP8N90C3D1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 30 pF

Package: TO220

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IXYP8N90C3D1 datasheet

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IXYP8N90C3D1

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYA8N90C3D1 GenX3TM w/Diode IC110 = 8A IXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V... See More ⇒

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IXYP8N90C3D1

Advance Technical Information 900V XPTTM IGBTs VCES = 900V IXYY8N90C3 GenX3TM IC110 = 8A IXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V TO-220 (IXYP) VG... See More ⇒

Specs: TSG10N120CN, AP05G120NSW-HF, AP20GT60SW, AP20GT60W, CI15T60, MMIX4B12N300, NGD8205A, IXYA8N90C3D1, RJH30E2DPP, APT20GN60BG, APT20GN60KG, APT20GN60SG, AOK20B60D1, F3L30R06W1E3_B11, WGW15G120N, WGW15G120W, IRG4MC50U

Keywords - IXYP8N90C3D1 transistor spec

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