All IGBT. MMIX4B20N300 Datasheet

 

MMIX4B20N300 IGBT. Datasheet pdf. Equivalent

Type Designator: MMIX4B20N300

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 3000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 34

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 210

Maximum Collector Capacity (Cc), pF: 92

Package: SMPD

MMIX4B20N300 Transistor Equivalent Substitute - IGBT Cross-Reference Search

MMIX4B20N300 IGBT. Datasheet pdf. Equivalent

Type Designator: MMIX4B20N300

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 3000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 34

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 210

Maximum Collector Capacity (Cc), pF: 92

Package: SMPD

MMIX4B20N300 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMIX4B20N300 Datasheet (PDF)

0.1. mmix4b20n300.pdf Size:247K _ixys

MMIX4B20N300
MMIX4B20N300

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS TransistorC2C1 VCE(sat) 3.2V G1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4G4E3E4C1Symbol Test Conditions Maximum RatingsG1VCES TC = 25C to 150C 3000 VE1C3VCGR TJ = 25C to 150C

7.1. mmix4b22n300.pdf Size:245K _ixys

MMIX4B20N300
MMIX4B20N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000

 8.1. mmix4b12n300.pdf Size:252K _ixys

MMIX4B20N300
MMIX4B20N300

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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