AOT10B60D PDF and Equivalents Search

 

AOT10B60D PDF Specs and Replacement


   Type Designator: AOT10B60D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 163 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.53 V @25℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 68 pF
   Package: TO220
 

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AOT10B60D PDF specs

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AOT10B60D

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t... See More ⇒

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AOT10B60D

AOT10B60M1 TM 600V,10A Alpha IGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 600V 600V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.3V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒

 7.1. Size:1525K  aosemi
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AOT10B60D

AOT10B65M2 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 10A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies ... See More ⇒

 7.2. Size:1183K  aosemi
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AOT10B60D

AOT10B65M1/AOB10B65M1 TM 650V, 10A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(SAT) enables high... See More ⇒

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Specs: AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , CRG40T60AK3HD , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG .

Keywords - AOT10B60D transistor spec

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