All IGBT. AOT10B60D Datasheet

 

AOT10B60D IGBT. Datasheet pdf. Equivalent


   Type Designator: AOT10B60D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 163
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.53
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.6(typ)
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 68
   Total Gate Charge (Qg), typ, nC: 17.4
   Package: TO220

 AOT10B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOT10B60D Datasheet (PDF)

 ..1. Size:654K  aosemi
aot10b60d.pdf

AOT10B60D
AOT10B60D

AOT10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 9.1. Size:375K  aosemi
aot10n60.pdf

AOT10B60D
AOT10B60D

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.2. Size:284K  aosemi
aot10t60p.pdf

AOT10B60D
AOT10B60D

AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.3. Size:203K  aosemi
aot10n65.pdf

AOT10B60D
AOT10B60D

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:260K  inchange semiconductor
aot10n60.pdf

AOT10B60D
AOT10B60D

isc N-Channel MOSFET Transistor AOT10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.5. Size:261K  inchange semiconductor
aot10n65.pdf

AOT10B60D
AOT10B60D

isc N-Channel MOSFET Transistor AOT10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , YGW40N65F1 , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG .

 

 
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