All IGBT. AOT10B60D Datasheet

 

AOT10B60D Datasheet and Replacement


   Type Designator: AOT10B60D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 163 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.53 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6(typ) V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 68 pF
   Qgⓘ - Total Gate Charge, typ: 17.4 nC
   Package: TO220
      - IGBT Cross-Reference

 

AOT10B60D Datasheet (PDF)

 ..1. Size:654K  aosemi
 aot10b60d.pdf pdf_icon

AOT10B60D

AOT10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 6.1. Size:582K  aosemi
 aot10b60m1.pdf pdf_icon

AOT10B60D

AOT10B60M1TM 600V,10A Alpha IGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 600V 600V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.3VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

 7.1. Size:1525K  aosemi
 aot10b65m2.pdf pdf_icon

AOT10B60D

AOT10B65M2TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 10A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.6V High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies

 7.2. Size:1183K  aosemi
 aot10b65m1.pdf pdf_icon

AOT10B60D

AOT10B65M1/AOB10B65M1TM650V, 10A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(SAT) enables high

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: HGTG30N60B3

Keywords - AOT10B60D transistor datasheet

 AOT10B60D cross reference
 AOT10B60D equivalent finder
 AOT10B60D lookup
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