AOT10B60D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: AOT10B60D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 163

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.53

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 175

Время нарастания: 15

Емкость коллектора (Cc), pf: 68

Корпус: TO220

Аналог (замена) для AOT10B60D

AOT10B60D Datasheet (PDF)

1.1. aot10b60d.pdf Size:654K _igbt_a

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

1.2. aot10b60d.pdf Size:659K _aosemi

AOT10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

 5.1. aot10n65.pdf Size:203K _aosemi

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.2. aot10t60p.pdf Size:284K _aosemi

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 40A • Low Ciss and Crss RDS(ON),max < 0.7Ω • High Current Capability Qg,typ 26nC • RoHS and Halogen Free Compliant Eoss @ 400V 3.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

 5.3. aot10n60.pdf Size:375K _aosemi

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

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