AOT10B60D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: AOT10B60D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 163

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.53

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 175

Время нарастания: 15

Емкость коллектора (Cc), pf: 68

Тип корпуса: TO220

Аналог (замена) для AOT10B60D

AOT10B60D Datasheet (PDF)

0.1. aot10b60d.pdf Size:654K _aosemi

AOT10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

9.1. aot10n65.pdf Size:203K _aosemi

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.2. aot10t60p.pdf Size:284K _aosemi

AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.3. aot10n60.pdf Size:375K _aosemi

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

9.4. aot10n65.pdf Size:261K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOT10N65FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.5. aot10n60.pdf Size:260K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOT10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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