MMIX1X100N60B3H1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

MMIX1X100N60B3H1 Specs and Replacement

Type Designator: MMIX1X100N60B3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 105 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 475 pF

Package: SMPD

MMIX1X100N60B3H1 Substitution

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MMIX1X100N60B3H1 datasheet

0.1. Size:299K ixys
mmix1x100n60b3h1.pdf pdf_icon

Preliminary Technical Information XPTTM 600V VCES = 600V MMIX1X100N60B3H1 GenX3TM w/ Diode IC90 = 60A VCE(sat) 1.80V (Electrically Isolated Tab) C Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Isolated Tab VGES Continuous 20 V ... See More ⇒

8.1. Size:243K ixys
mmix1x200n60b3h1.pdf pdf_icon

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3H1 IC110 = 72A GenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Conti... See More ⇒

8.2. Size:241K ixys
mmix1x340n65b4.pdf pdf_icon

Advance Technical Information VCES = 650V XPTTM 650V IGBT MMIX1X340N65B4 IC90 = 295A GenX4TM VCE(sat) 1.7V tfi(typ) = 80ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G E Maximum Ratings ymbol Test Conditions VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE =... See More ⇒

8.3. Size:233K ixys
mmix1x200n60b3.pdf pdf_icon

Preliminary Technical Information VCES = 600V XPTTM 600V IGBT MMIX1X200N60B3 IC110 = 120A GenX3TM VCE(sat) 1.7V (Electrically Isolated Tab) tfi(typ) = 110ns Extreme Light Punch Through C IGBT for 10-30kHz Switching G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V E VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Continuous 2... See More ⇒

Specs: APT15GP90BG , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , CRG40T65AK5HD , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 .

Keywords - MMIX1X100N60B3H1 transistor spec

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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

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