MMIX1X100N60B3H1 - параметры транзистора, его аналоги, Даташиты

MMIX1X100N60B3H1 Datasheet (PDF)

0.1. Size:299K ixys
mmix1x100n60b3h1.pdf pdf_icon

Preliminary Technical InformationXPTTM 600V VCES = 600VMMIX1X100N60B3H1GenX3TM w/ DiodeIC90 = 60AVCE(sat) 1.80V(Electrically Isolated Tab)CMedium-Speed Low-Vsat PTIGBT for 10-30 kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V Isolated TabVGES Continuous 20 V

8.1. Size:243K ixys
mmix1x200n60b3h1.pdf pdf_icon

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3H1IC110 = 72AGenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Conti

8.2. Size:241K ixys
mmix1x340n65b4.pdf pdf_icon

Advance Technical InformationVCES = 650VXPTTM 650V IGBT MMIX1X340N65B4IC90 = 295AGenX4TM VCE(sat) 1.7V tfi(typ) = 80nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingCGE Maximum Ratingsymbol Test ConditionsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

8.3. Size:233K ixys
mmix1x200n60b3.pdf pdf_icon

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3IC110 = 120AGenX3TM VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VEVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 2

Другие IGBT... APT15GP90BG , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , KGF75N65KDF , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 .