RJH1BF7RDPQ-80 PDF and Equivalents Search

 

RJH1BF7RDPQ-80 Specs and Replacement

Type Designator: RJH1BF7RDPQ-80

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 78 nS

Coesⓘ - Output Capacitance, typ: 67 pF

Package: TO247

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RJH1BF7RDPQ-80 datasheet

 ..1. Size:98K  renesas
rjh1bf7rdpq-80.pdf pdf_icon

RJH1BF7RDPQ-80

Preliminary Datasheet RJH1BF7RDPQ-80 R07DS0394EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 16, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25... See More ⇒

 8.1. Size:98K  renesas
rjh1bf6rdpq-80.pdf pdf_icon

RJH1BF7RDPQ-80

Preliminary Datasheet RJH1BF6RDPQ-80 R07DS0393EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 16, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 2... See More ⇒

Specs: APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , FGPF4533 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B .

Keywords - RJH1BF7RDPQ-80 transistor spec

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