RJH1BF7RDPQ-80 IGBT. Datasheet pdf. Equivalent
Type Designator: RJH1BF7RDPQ-80
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 78 nS
Coesⓘ - Output Capacitance, typ: 67 pF
Package: TO247
RJH1BF7RDPQ-80 Transistor Equivalent Substitute - IGBT Cross-Reference Search
RJH1BF7RDPQ-80 Datasheet (PDF)
rjh1bf7rdpq-80.pdf
Preliminary Datasheet RJH1BF7RDPQ-80 R07DS0394EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 16, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25
rjh1bf6rdpq-80.pdf
Preliminary Datasheet RJH1BF6RDPQ-80 R07DS0393EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 16, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 2
Datasheet: APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , TGAN40N60FD , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B .
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