All IGBT. RJH1DF7RDPQ-80 Datasheet

 

RJH1DF7RDPQ-80 Datasheet and Replacement


   Type Designator: RJH1DF7RDPQ-80
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 78 nS
   Coesⓘ - Output Capacitance, typ: 62 pF
   Package: TO247
      - IGBT Cross-Reference

 

RJH1DF7RDPQ-80 Datasheet (PDF)

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RJH1DF7RDPQ-80

Preliminary Datasheet RJH1DF7RDPQ-80 R07DS0413EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 18, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj =

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History: 2MBI100UA-120 | SKM150GB12T4

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