RJH1DF7RDPQ-80 PDF and Equivalents Search

 

RJH1DF7RDPQ-80 Specs and Replacement

Type Designator: RJH1DF7RDPQ-80

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 78 nS

Coesⓘ - Output Capacitance, typ: 62 pF

Package: TO247

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RJH1DF7RDPQ-80 datasheet

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 rjh1df7rdpq-80.pdf pdf_icon

RJH1DF7RDPQ-80

Preliminary Datasheet RJH1DF7RDPQ-80 R07DS0413EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 18, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 35 A, VGE = 15 V, Tj = ... See More ⇒

Specs: APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , GT30F124 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 .

History: IXGT60N60

Keywords - RJH1DF7RDPQ-80 transistor spec

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