All IGBT. APT40GP60JDQ2 Datasheet

 

APT40GP60JDQ2 Datasheet and Replacement


   Type Designator: APT40GP60JDQ2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 284 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 395 pF
   Qg ⓘ - Total Gate Charge, typ: 135 nC
   Package: SOT227
 

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APT40GP60JDQ2 Datasheet (PDF)

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APT40GP60JDQ2

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recongnized"ISOTOP file # 145592 Low

 3.1. Size:210K  apt
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APT40GP60JDQ2

TYPICAL PERFORMANCE CURVESAPT40GP60JDF2APT40GP60JDF2600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"ISOTOPfi Low Conduction Loss

 4.1. Size:97K  apt
apt40gp60j.pdf pdf_icon

APT40GP60JDQ2

APT40GP60J600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate

 5.1. Size:197K  apt
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APT40GP60JDQ2

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

Datasheet: MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , MBQ60T65PES , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 .

History: MG75J1ZS50 | MPMC200B120RH | APTGF90DH60T | DGP15N65CTL | RGT50NL65D | APT30GT60BRG | SL15T65FF

Keywords - APT40GP60JDQ2 transistor datasheet

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