APT40GP60JDQ2 - аналоги и описание IGBT

 

APT40GP60JDQ2 - Аналоги. Основные параметры


   Наименование: APT40GP60JDQ2
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 284 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 395 pF
   Тип корпуса: SOT227
 

 Аналог (замена) для APT40GP60JDQ2

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры APT40GP60JDQ2

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APT40GP60JDQ2

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recongnized" ISOTOP file # 145592 Low

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APT40GP60JDQ2

TYPICAL PERFORMANCE CURVES APT40GP60JDF2 APT40GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOPfi Low Conduction Loss

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APT40GP60JDQ2

APT40GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate

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APT40GP60JDQ2

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k

Другие IGBT... MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , FGH60N60SMD , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 .

 

 
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