HGT1S3N60A4DS Datasheet and Replacement
Type Designator: HGT1S3N60A4DS
Type: IGBT + Anti-Parallel Diode
Marking Code: 3N60A4D
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 17 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 11 nS
Qgⓘ - Total Gate Charge, typ: 21 nC
Package: TO263
- IGBT Cross-Reference
HGT1S3N60A4DS Datasheet (PDF)
hgtp3n60c3d hgt1s3n60c3d hgt1s3n60c3ds.pdf
HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss
Datasheet: HGT1S20N60C3R , HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , RJP63K2DPP-M0 , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS .
History: IXGP12N100U1 | SKB15N60 | IXGH50N60B | SGB10N60A | IXGR16N170AH1 | IXGT32N60CD1
Keywords - HGT1S3N60A4DS transistor datasheet
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History: IXGP12N100U1 | SKB15N60 | IXGH50N60B | SGB10N60A | IXGR16N170AH1 | IXGT32N60CD1
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