All IGBT. HGT1S3N60A4S Datasheet

 

HGT1S3N60A4S Datasheet and Replacement


   Type Designator: HGT1S3N60A4S
   Type: IGBT
   Marking Code: 3N60A4
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 70 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 17 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 11 nS
   Qg ⓘ - Total Gate Charge, typ: 21 nC
   Package: TO263
 

 HGT1S3N60A4S substitution

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HGT1S3N60A4S Datasheet (PDF)

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HGT1S3N60A4S

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HGT1S3N60A4S

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HGT1S3N60A4S

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HGT1S3N60A4S

HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss

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Datasheet: HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , FGH40N60UFD , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS .

History: IXGH15N120CD1

Keywords - HGT1S3N60A4S transistor datasheet

 HGT1S3N60A4S cross reference
 HGT1S3N60A4S equivalent finder
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