All IGBT. HGT1S3N60A4S Datasheet

 

HGT1S3N60A4S Datasheet and Replacement


   Type Designator: HGT1S3N60A4S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 70 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 17 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 11 nS
   Package: TO263
      - IGBT Cross-Reference

 

HGT1S3N60A4S Datasheet (PDF)

 ..1. Size:644K  1
 hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4.pdf pdf_icon

HGT1S3N60A4S

 3.1. Size:677K  1
 hgt1s3n60a4ds hgtp3n60a4d.pdf pdf_icon

HGT1S3N60A4S

 5.1. Size:810K  1
 hgtd3n60b3 hgtd3n60b3s hgt1s3n60b3 hgt1s3n60b3s hgtp3n60b3.pdf pdf_icon

HGT1S3N60A4S

 5.2. Size:390K  1
 hgtp3n60c3d hgt1s3n60c3d hgt1s3n60c3ds.pdf pdf_icon

HGT1S3N60A4S

HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss

SHOW MORE

Datasheet: HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , FGH40N60UFD , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS .

Keywords - HGT1S3N60A4S transistor datasheet

 HGT1S3N60A4S cross reference
 HGT1S3N60A4S equivalent finder
 HGT1S3N60A4S lookup
 HGT1S3N60A4S substitution
 HGT1S3N60A4S replacement

 

 
Back to Top

 


 
.