AOK50B60D1 Datasheet and Replacement
Type Designator: AOK50B60D1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 308 pF
Package: TO247
- IGBT Cross-Reference
AOK50B60D1 Datasheet (PDF)
aok50b60d1.pdf

AOK50B60D1TM600V, 50A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 50Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok50b65m2.pdf

AOK50B65M2TM650V, 50A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 50A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok50b65h1.pdf

AOK50B65H1TM650V, 50A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 50AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.9VC) High efficient turn-on di/dt controllability Very high switching speed Low
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IRGC16B60KB
Keywords - AOK50B60D1 transistor datasheet
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History: IRGC16B60KB



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