APT45GP120JDQ2 PDF and Equivalents Search

 

APT45GP120JDQ2 Specs and Replacement

Type Designator: APT45GP120JDQ2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 329 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 34 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: SOT227

 APT45GP120JDQ2 Substitution

- IGBT ⓘ Cross-Reference Search

 

APT45GP120JDQ2 datasheet

 ..1. Size:457K  apt
apt45gp120jdq2.pdf pdf_icon

APT45GP120JDQ2

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒

 0.1. Size:457K  apt
apt45gp120jdq220.pdf pdf_icon

APT45GP120JDQ2

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒

 2.1. Size:205K  apt
apt45gp120jdf2.pdf pdf_icon

APT45GP120JDQ2

TYPICAL PERFORMANCE CURVES APT45GP120JDF2 APT45GP120JDF2 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss ... See More ⇒

 3.1. Size:97K  apt
apt45gp120j.pdf pdf_icon

APT45GP120JDQ2

APT45GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate... See More ⇒

Specs: RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , RJP63F3DPP-M0 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , APT43GA90B .

Keywords - APT45GP120JDQ2 transistor spec

 APT45GP120JDQ2 cross reference
 APT45GP120JDQ2 equivalent finder
 APT45GP120JDQ2 lookup
 APT45GP120JDQ2 substitution
 APT45GP120JDQ2 replacement

 

 

 


 
↑ Back to Top
.