Справочник IGBT. APT45GP120JDQ2

 

APT45GP120JDQ2 Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT45GP120JDQ2
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 329 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 34 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 300 pF
   Тип корпуса: SOT227
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APT45GP120JDQ2 Datasheet (PDF)

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apt45gp120jdq2.pdfpdf_icon

APT45GP120JDQ2

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 0.1. Size:457K  apt
apt45gp120jdq220.pdfpdf_icon

APT45GP120JDQ2

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 2.1. Size:205K  apt
apt45gp120jdf2.pdfpdf_icon

APT45GP120JDQ2

TYPICAL PERFORMANCE CURVES APT45GP120JDF2APT45GP120JDF21200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss

 3.1. Size:97K  apt
apt45gp120j.pdfpdf_icon

APT45GP120JDQ2

APT45GP120J1200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

Другие IGBT... RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , FGPF4633 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , APT43GA90B .

History: RJH60D0DPM | KGT15N120NDA | MSG40T65FL | SKW15N60 | DGC50F65M2 | STGW20NB60H | IXGX82N120B3

 

 
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