All IGBT. APT35GN120L2DQ2G Datasheet

 

APT35GN120L2DQ2G Datasheet and Replacement


   Type Designator: APT35GN120L2DQ2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 379 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 46 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT35GN120L2DQ2G Datasheet (PDF)

 0.1. Size:237K  apt
apt35gn120l2dq2g.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result

 4.1. Size:180K  apt
apt35gn120b.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120BAPT35GN120B1200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

 4.2. Size:142K  microsemi
apt35gn120sg.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle

 4.3. Size:142K  microsemi
apt35gn120bg.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGA15N120B2 | APT75GN120J | IRG4ZH70UD | STGB10NC60KD | IKW15N120H3 | IXGH10N100U1 | IRG4PSH71UD

Keywords - APT35GN120L2DQ2G transistor datasheet

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