APT35GN120L2DQ2G PDF and Equivalents Search

 

APT35GN120L2DQ2G Specs and Replacement

Type Designator: APT35GN120L2DQ2G

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 379 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 46 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Qg ⓘ - Total Gate Charge, typ: 220 nC

Package: TO247

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APT35GN120L2DQ2G datasheet

 0.1. Size:237K  apt
 apt35gn120l2dq2g.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result... See More ⇒

 4.1. Size:180K  apt
 apt35gn120b.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120B APT35GN120B 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en... See More ⇒

 4.2. Size:142K  microsemi
 apt35gn120sg.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle... See More ⇒

 4.3. Size:142K  microsemi
 apt35gn120bg.pdf pdf_icon

APT35GN120L2DQ2G

TYPICAL PERFORMANCE CURVES APT35GN120B_S(G) APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B) have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAK results in superior VCE(on) performance. Easy paralle... See More ⇒

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Specs: VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , TGAN60N60FD , APT35GN120BG , CRG15T120BNR3S , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG .

Keywords - APT35GN120L2DQ2G transistor spec

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