APT35GN120L2DQ2G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: APT35GN120L2DQ2G
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 379 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 46 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 22 nS
Coesⓘ - Выходная емкость, типовая: 150 pF
Тип корпуса: TO247
Аналог (замена) для APT35GN120L2DQ2G
APT35GN120L2DQ2G Datasheet (PDF)
apt35gn120l2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT35GN120L2DQ2(G) 1200V APT35GN120L2DQ2 APT35GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result
apt35gn120b.pdf
TYPICAL PERFORMANCE CURVES APT35GN120BAPT35GN120B1200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en
apt35gn120sg.pdf
TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle
apt35gn120bg.pdf
TYPICAL PERFORMANCE CURVES APT35GN120B_S(G)APT35GN120B APT35GN120S APT35GN120BG APT35GN120SG 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs (B)have a very short, low amplitude tail current and low Eoff. The Trench Gate design D3PAKresults in superior VCE(on) performance. Easy paralle
Другие IGBT... VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , TGAN60N60FD , APT35GN120BG , SGH80N60UFD , APT60GT60JRDQ3 , APT75GN120J , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG .
Список транзисторов
Обновления
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