All IGBT. HGT1S3N60B3S Datasheet

 

HGT1S3N60B3S Datasheet and Replacement


   Type Designator: HGT1S3N60B3S
   Type: IGBT
   Marking Code: G3N60B3
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 33.3 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 16 nS
   Qg ⓘ - Total Gate Charge, typ: 18 nC
   Package: TO263
 

 HGT1S3N60B3S substitution

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HGT1S3N60B3S Datasheet (PDF)

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HGT1S3N60B3S

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HGT1S3N60B3S

HGTP3N60B3D, HGT1S3N60B3DSData Sheet January 2000 File Number 4414.17A, 600V, UFS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 7A, 600V TC = 25oCThe HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oCo

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HGT1S3N60B3S

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HGT1S3N60B3S

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Datasheet: HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , FGH40N60SFD , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS , HGT1S5N120CNS , HGT1S7N60A4DS .

History: MMG150J120UZ6TC

Keywords - HGT1S3N60B3S transistor datasheet

 HGT1S3N60B3S cross reference
 HGT1S3N60B3S equivalent finder
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