HGT1S3N60B3S Datasheet and Replacement
Type Designator: HGT1S3N60B3S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 33.3 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 7 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 16 nS
Package: TO263
- IGBT Cross-Reference
HGT1S3N60B3S Datasheet (PDF)
hgtp3n60b3d hgt1s3n60b3ds.pdf
HGTP3N60B3D, HGT1S3N60B3DSData Sheet January 2000 File Number 4414.17A, 600V, UFS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 7A, 600V TC = 25oCThe HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oCo
Datasheet: HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , GT50JR22 , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS , HGT1S5N120CNS , HGT1S7N60A4DS .
History: IHW15N120R2 | MMG200Q120B6HN | CRG15T60A83L | 2MBI900VXA-120P-50 | BT15T60A8F | BSM400GA120DLC | IQGB300N120I4
Keywords - HGT1S3N60B3S transistor datasheet
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HGT1S3N60B3S replacement
History: IHW15N120R2 | MMG200Q120B6HN | CRG15T60A83L | 2MBI900VXA-120P-50 | BT15T60A8F | BSM400GA120DLC | IQGB300N120I4
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