HGT1S3N60B3S Datasheet. Specs and Replacement

Type Designator: HGT1S3N60B3S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 33.3 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 7 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Package: TO263

 HGT1S3N60B3S Substitution

- IGBTⓘ Cross-Reference Search

 

HGT1S3N60B3S datasheet

 ..1. Size:810K  1
 hgtd3n60b3 hgtd3n60b3s hgt1s3n60b3 hgt1s3n60b3s hgtp3n60b3.pdf pdf_icon

HGT1S3N60B3S

... See More ⇒

 3.1. Size:154K  1
 hgtp3n60b3d hgt1s3n60b3ds.pdf pdf_icon

HGT1S3N60B3S

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 7A, 600V TC = 25oC The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC o... See More ⇒

 5.1. Size:644K  1
 hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4.pdf pdf_icon

HGT1S3N60B3S

... See More ⇒

 5.2. Size:677K  1
 hgt1s3n60a4ds hgtp3n60a4d.pdf pdf_icon

HGT1S3N60B3S

... See More ⇒

SHOW MORE

Specs: HGT1S2N120BNDS, HGT1S2N120BNS, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3, HGT1S3N60B3DS, GT30J124, HGT1S3N60C3D, HGT1S3N60C3DS, HGT1S3N60C3DS9A, HGT1S5N120BNDS, HGT1S5N120BNS, HGT1S5N120CNDS, HGT1S5N120CNS, HGT1S7N60A4DS

Keywords - HGT1S3N60B3S transistor spec

 HGT1S3N60B3S cross reference
 HGT1S3N60B3S equivalent finder
 HGT1S3N60B3S lookup
 HGT1S3N60B3S substitution
 HGT1S3N60B3S replacement