APT50GN120L2DQ2G Datasheet and Replacement
Type Designator: APT50GN120L2DQ2G
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 543 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 66 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TO264
APT50GN120L2DQ2G substitution
APT50GN120L2DQ2G Datasheet (PDF)
apt50gn120l2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result
apt50gn120b2.pdf

TYPICAL PERFORMANCE CURVES APT50GN120B2APT50GN120B21200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Maxparameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r
apt50gn120b2g.pdf

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TMT-Maxresults in superior VCE(on) performance. Easy paralleling results from very t
Datasheet: APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , GT60N321 , APT40GP60B2DQ2G , APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B .
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APT50GN120L2DQ2G substitution
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