APT50GN120L2DQ2G - параметры транзистора, его аналоги, Даташиты

APT50GN120L2DQ2G Datasheet (PDF)

0.1. Size:226K apt
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TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result

4.1. Size:187K apt
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TYPICAL PERFORMANCE CURVES APT50GN120B2APT50GN120B21200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Maxparameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r

4.2. Size:190K apt
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TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TMT-Maxresults in superior VCE(on) performance. Easy paralleling results from very t

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