APT45GP120B2DQ2G PDF and Equivalents Search

 

APT45GP120B2DQ2G Specs and Replacement

Type Designator: APT45GP120B2DQ2G

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 54 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: TO247

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APT45GP120B2DQ2G datasheet

 0.1. Size:436K  apt
 apt45gp120b2dq2g.pdf pdf_icon

APT45GP120B2DQ2G

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for ... See More ⇒

 1.1. Size:196K  apt
 apt45gp120b2df2.pdf pdf_icon

APT45GP120B2DQ2G

APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES APT45GP120B2DF2 1200V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C Low Conduction Loss 10... See More ⇒

 3.1. Size:102K  apt
 apt45gp120bg.pdf pdf_icon

APT45GP120B2DQ2G

APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge ... See More ⇒

 3.2. Size:88K  apt
 apt45gp120b.pdf pdf_icon

APT45GP120B2DQ2G

APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge ... See More ⇒

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Specs: APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S , CRG40T65AK5HD , APT45GP120BG , APT80GA90B , APT80GA90LD40 , APT80GA90S , APT50GP60BG , APT50GP60SG , MPMB75B120RH , APT50GT120B2RDQ2G .

History: APT80GA60LD40 | APT40GP60SG

Keywords - APT45GP120B2DQ2G transistor spec

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