Справочник IGBT. APT45GP120B2DQ2G

 

APT45GP120B2DQ2G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT45GP120B2DQ2G
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 54 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 300 pF
   Qgⓘ - Общий заряд затвора, typ: 185 nC
   Тип корпуса: TO247

 Аналог (замена) для APT45GP120B2DQ2G

 

 

APT45GP120B2DQ2G Datasheet (PDF)

 0.1. Size:436K  apt
 apt45gp120b2dq2g.pdf

APT45GP120B2DQ2G APT45GP120B2DQ2G

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 1.1. Size:196K  apt
 apt45gp120b2df2.pdf

APT45GP120B2DQ2G APT45GP120B2DQ2G

APT45GP120B2DF2TYPICAL PERFORMANCE CURVESAPT45GP120B2DF21200VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCC Low Conduction Loss 10

 3.1. Size:102K  apt
 apt45gp120bg.pdf

APT45GP120B2DQ2G APT45GP120B2DQ2G

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

 3.2. Size:88K  apt
 apt45gp120b.pdf

APT45GP120B2DQ2G APT45GP120B2DQ2G

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

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