APT50GP60BG Spec and Replacement, IGBT Equivalent Finder, Cross Reference

APT50GP60BG Specs and Replacement

Type Designator: APT50GP60BG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 72 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 465 pF

Package: TO247

APT50GP60BG Substitution

- IGBT ⓘ Cross-Reference Search

APT50GP60BG datasheet

..1. Size:96K apt
apt50gp60bg.pdf pdf_icon

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26... See More ⇒

4.1. Size:196K apt
apt50gp60b2df2.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 200 kH... See More ⇒

4.2. Size:425K apt
apt50gp60b2dq2g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for ... See More ⇒

4.3. Size:88K apt
apt50gp60b.pdf pdf_icon