APT50GP60BG - аналоги, параметры транзистора - Справочник транзисторов

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APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26

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TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 200 kH

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TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

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