All IGBT. IXYX120N120C3 Datasheet

 

IXYX120N120C3 Datasheet and Replacement


   Type Designator: IXYX120N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 220 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 560 pF
   Qg ⓘ - Total Gate Charge, typ: 430 nC
   Package: PLUS247
 

 IXYX120N120C3 substitution

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IXYX120N120C3 Datasheet (PDF)

 ..1. Size:212K  ixys
 ixyk120n120c3 ixyx120n120c3.pdf pdf_icon

IXYX120N120C3

1200V XPTTM IGBTs VCES = 1200VIXYK120N120C3GenX3TM IC110 = 120AIXYX120N120C3 VCE(sat) 3.20V tfi(typ) = 96nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

 ..2. Size:204K  ixys
 ixyx120n120c3.pdf pdf_icon

IXYX120N120C3

Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK120N120C3GenX3TM IC110 = 120AIXYX120N120C3 VCE(sat) 3.5V tfi(typ) = 90nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247

 3.1. Size:164K  ixys
 ixyx120n120b3.pdf pdf_icon

IXYX120N120C3

Advance Technical Information1200V XPTTM IGBT VCES = 1200VIXYK120N120B3GenX3TM IC110 = 120AIXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260nsHigh-Speed IGBTfor 10-30 kHz SwitchingTO-264P (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGVCGR TJ = 25C to 175C, RGE = 1M 120

 9.1. Size:205K  ixys
 ixyx140n90c3.pdf pdf_icon

IXYX120N120C3

Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYK140N90C3GenX3TM IC110 = 140AIXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 900 V ETabVCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V PLUS247 (

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Datasheet: APT50GT120B2RG , MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , SGT40N60NPFDPN , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G .

History: ISL9V2540S3ST | BLG40T65FUK-W

Keywords - IXYX120N120C3 transistor datasheet

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