All IGBT. APT75GP120B2G Datasheet

 

APT75GP120B2G Datasheet and Replacement


   Type Designator: APT75GP120B2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1042 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 91 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 460 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT75GP120B2G Datasheet (PDF)

 ..1. Size:96K  apt
apt75gp120b2g.pdf pdf_icon

APT75GP120B2G

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 2.1. Size:94K  apt
apt75gp120b2.pdf pdf_icon

APT75GP120B2G

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 4.1. Size:453K  apt
apt75gp120jdq3.pdf pdf_icon

APT75GP120B2G

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 4.2. Size:33K  apt
apt75gp120j.pdf pdf_icon

APT75GP120B2G

APT75GP120J1200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies.C Low Conduction Loss RBSOA rated Low Gate ChargeG

Datasheet: APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , IHW20N120R3 , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L .

History: APT11GF120KR | RJH60D2DPP-M0 | APT100GT60JRDL | APT13GP120B | RJH60D2DPE | APT60GT60SRG | IXDN75N120

Keywords - APT75GP120B2G transistor datasheet

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