Справочник IGBT. APT75GP120B2G

 

APT75GP120B2G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT75GP120B2G
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 1042 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 91 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Coesⓘ - Выходная емкость, типовая: 460 pF
   Qgⓘ - Общий заряд затвора, typ: 320 nC
   Тип корпуса: TO247

 Аналог (замена) для APT75GP120B2G

 

 

APT75GP120B2G Datasheet (PDF)

 ..1. Size:96K  apt
 apt75gp120b2g.pdf

APT75GP120B2G APT75GP120B2G

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 2.1. Size:94K  apt
 apt75gp120b2.pdf

APT75GP120B2G APT75GP120B2G

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 4.1. Size:453K  apt
 apt75gp120jdq3.pdf

APT75GP120B2G APT75GP120B2G

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 4.2. Size:33K  apt
 apt75gp120j.pdf

APT75GP120B2G APT75GP120B2G

APT75GP120J1200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies.C Low Conduction Loss RBSOA rated Low Gate ChargeG

 4.3. Size:203K  apt
 apt75gp120jdf3.pdf

APT75GP120B2G APT75GP120B2G

TYPICAL PERFORMANCE CURVES APT75GP120JDF3APT75GP120JDF31200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"ISOTOPswitchmode power supplies. Low Conduction Loss

Другие IGBT... APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , RJP63F3DPP-M0 , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L .

 

 
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