HGT1S5N120CNS Datasheet. Specs and Replacement

Type Designator: HGT1S5N120CNS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 167 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Package: TO263

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HGT1S5N120CNS datasheet

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HGT1S5N120CNS

HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150... See More ⇒

 2.1. Size:87K  1
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HGT1S5N120CNS

HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 File Number 4598.2 25A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oC The HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA Capability HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC de... See More ⇒

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HGT1S5N120CNS

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oC The HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA Capability HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC ... See More ⇒

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HGT1S5N120CNS

HGTP5N120BN, HGT1S5N120BNS Data Sheet January 2000 File Number 4599.2 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oC Non-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capability members of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ... See More ⇒

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Specs: HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D, HGT1S3N60C3DS, HGT1S3N60C3DS9A, HGT1S5N120BNDS, HGT1S5N120BNS, HGT1S5N120CNDS, RJP30H2A, HGT1S7N60A4DS, HGT1S7N60B3, HGT1S7N60B3D, HGT1S7N60B3DS, HGT1S7N60B3S, HGT1S7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3DS9A

Keywords - HGT1S5N120CNS transistor spec

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