HGT1S5N120CNS Даташит. Аналоги. Параметры и характеристики.
Наименование: HGT1S5N120CNS
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 167 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 25 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 12 nS
Тип корпуса: TO263
- подбор IGBT транзистора по параметрам
HGT1S5N120CNS Datasheet (PDF)
hgtp5n120cn hgt1s5n120cns.pdf

HGTP5N120CN, HGT1S5N120CNSData Sheet December 200125A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150
hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf

HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde
hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
hgtp5n120bn hgt1s5n120bns.pdf

HGTP5N120BN, HGT1S5N120BNSData Sheet January 2000 File Number 4599.221A, 1200V, NPT Series N-Channel IGBTs FeaturesThe HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oCNon-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capabilitymembers of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ
Другие IGBT... HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS , FGH60N60SMD , HGT1S7N60A4DS , HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS , HGT1S7N60B3S , HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A .
History: HGTD1N120BNS | IXGA48N60C3 | MMG400D060B6TC | VS-GT100LA120UX | IXXH50N60C3 | IXBX28N300HV | BSM300GB120DLC
History: HGTD1N120BNS | IXGA48N60C3 | MMG400D060B6TC | VS-GT100LA120UX | IXXH50N60C3 | IXBX28N300HV | BSM300GB120DLC



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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