MPMC200B120RH Specs and Replacement
Type Designator: MPMC200B120RH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 960 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 275 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 977 pF
Package: 7DM2 MPMC200B120RH Substitution - IGBT ⓘ Cross-Reference Search
MPMC200B120RH datasheet
mpmc200b120rh.pdf
MPMC200B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD Short circuit rated Min. 10us at TC=100 switching noise in high frequency power Isolation T... See More ⇒
Specs: IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , FGA60N65SMD , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D .
History: 2MBI600U2E-060
Keywords - MPMC200B120RH transistor spec
MPMC200B120RH cross reference
MPMC200B120RH equivalent finder
MPMC200B120RH lookup
MPMC200B120RH substitution
MPMC200B120RH replacement
History: 2MBI600U2E-060
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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