All IGBT. MPMC200B120RH Datasheet

 

MPMC200B120RH Datasheet and Replacement


   Type Designator: MPMC200B120RH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 960 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 275 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 977 pF
   Qg ⓘ - Total Gate Charge, typ: 790 nC
   Package: 7DM2
 

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MPMC200B120RH Datasheet (PDF)

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MPMC200B120RH

MPMC200B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10us at TC=100 switching noise in high frequency power Isolation T

Datasheet: IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , GT30F126 , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D .

History: APTGF90DH60T

Keywords - MPMC200B120RH transistor datasheet

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