All IGBT. MPMD150B120RH Datasheet

 

MPMD150B120RH IGBT. Datasheet pdf. Equivalent


   Type Designator: MPMD150B120RH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 833 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 740 pF
   Qgⓘ - Total Gate Charge, typ: 580 nC
   Package: 7DM3

 MPMD150B120RH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPMD150B120RH Datasheet (PDF)

 ..1. Size:1231K  magnachip
 mpmd150b120rh.pdf

MPMD150B120RH MPMD150B120RH

MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Typ

 9.1. Size:1241K  magnachip
 mpmd100b120rh.pdf

MPMD150B120RH MPMD150B120RH

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type Packa

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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