MPMD150B120RH Datasheet and Replacement
Type Designator: MPMD150B120RH
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 833 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 740 pF
Package: 7DM3
MPMD150B120RH substitution
MPMD150B120RH Datasheet (PDF)
mpmd150b120rh.pdf

MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Typ
mpmd100b120rh.pdf

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type Packa
Datasheet: MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , SGT50T65FD1PN , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G .
History: CM1800DY-34S | MWI75-12A8 | RGS80TSX2DHR | CM200DU-24NFH | GT30J122A | NCE100ED75VT | APTGF150DH120
Keywords - MPMD150B120RH transistor datasheet
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History: CM1800DY-34S | MWI75-12A8 | RGS80TSX2DHR | CM200DU-24NFH | GT30J122A | NCE100ED75VT | APTGF150DH120



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