IRGPS4067D Datasheet. Specs and Replacement

Type Designator: IRGPS4067D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 240 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 550 pF

Package: TO247

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IRGPS4067D datasheet

 ..1. Size:272K  international rectifier
 irgps4067d.pdf pdf_icon

IRGPS4067D

PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching Losses IC(Nominal) = 120A 5 s SCSOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) typ. = 1.70V ... See More ⇒

 0.1. Size:306K  international rectifier
 auirgps4067d1.pdf pdf_icon

IRGPS4067D

PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 160A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses 6 s SCSOA G tSC 6 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(on) typ. = 1.70V Positive VCE (on) Tempera... See More ⇒

 7.1. Size:113K  international rectifier
 irgps40b120u.pdf pdf_icon

IRGPS4067D

PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. 10 s Short Circuit Capability. VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, Super-247 Package. E n-channel ICE = 40A, Tj=25 C Benefits Benchmark Efficiency for Motor Control... See More ⇒

 7.2. Size:134K  international rectifier
 irgps40b120ud.pdf pdf_icon

IRGPS4067D

PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features Non Punch Through IGBT Technology. Low Diode VF. VCE(on) typ. = 3.12V 10 s Short Circuit Capability. Square RBSOA. G @ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi... See More ⇒

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Specs: MPMC200B120RH, F3L300R07PE4, APT65GP60L2DQ2G, MPMD150B120RH, IXYT80N90C3, APT102GA60B2, APT102GA60L, MPMD100B120RH, IRG7IC28U, MPMC150B120RH, MPMC100B120RH, APT200GN60B2G, TGL40N120FD, TGL40N120ND, IGW75N60H3, IKW75N60H3, APT25GP120BG

Keywords - IRGPS4067D transistor spec

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