All IGBT. IRGPS4067D Datasheet

 

IRGPS4067D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGPS4067D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 750

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 240

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 70

Maximum Collector Capacity (Cc), pF: 550

Package: TO247

IRGPS4067D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGPS4067D Datasheet (PDF)

0.1. irgps4067d.pdf Size:272K _international_rectifier

IRGPS4067D
IRGPS4067D

PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V  Low VCE (on) Trench IGBT Technology  Low Switching Losses IC(Nominal) = 120A  5μs SCSOA  Square RBSOA G tSC 5μs, TJ(max) = 175°C  100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. E VCE(on) typ. = 1.70V 

0.2. auirgps4067d1.pdf Size:306K _international_rectifier

IRGPS4067D
IRGPS4067D

PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 160A, TC = 100°C  Low VCE (on) Trench IGBT Technology  Low Switching Losses  6μs SCSOA G tSC 6μs, TJ(max) = 175°C  Square RBSOA  100% of the parts tested for ILM E VCE(on) typ. = 1.70V  Positive VCE (on) Tempera

 7.1. irgps40b120u.pdf Size:113K _international_rectifier

IRGPS4067D
IRGPS4067D

PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. VCE(on) typ. = 3.12V • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G @ VGE = 15V, • Super-247 Package. E n-channel ICE = 40A, Tj=25°C Benefits • Benchmark Efficiency for Motor Control

7.2. irgps40b120ud.pdf Size:134K _international_rectifier

IRGPS4067D
IRGPS4067D

PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. VCE(on) typ. = 3.12V • 10µs Short Circuit Capability. • Square RBSOA. G @ VGE = 15V, • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coeffi

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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