IRGPS4067D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRGPS4067D
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 750 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 240 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 70 nS
Coesⓘ - Выходная емкость, типовая: 550 pF
Тип корпуса: TO247
Аналог (замена) для IRGPS4067D
IRGPS4067D Datasheet (PDF)
irgps4067d.pdf
PD - 97736IRGPS4067DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching LossesIC(Nominal) = 120A 5s SCSOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.70V
auirgps4067d1.pdf
PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera
irgps40b120u.pdf
PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control
irgps40b120ud.pdf
PD- 94240AIRGPS40B120UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. Low Diode VF.VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA.G@ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi
auirgps4070d0.pdf
AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V
Другие IGBT... MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGP4063D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2