IKW75N60H3 PDF and Equivalents Search

 

IKW75N60H3 Specs and Replacement

Type Designator: IKW75N60H3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

 IKW75N60H3 Substitution

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IKW75N60H3 datasheet

 ..1. Size:1935K  infineon
 ikw75n60h3.pdf pdf_icon

IKW75N60H3

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very lo... See More ⇒

 6.1. Size:1972K  infineon
 aikw75n60ct.pdf pdf_icon

IKW75N60H3

AIKW75N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor... See More ⇒

 6.2. Size:853K  infineon
 ikw75n60t.pdf pdf_icon

IKW75N60H3

IKW75N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Positive temperature coefficient in VCE(sat) E very tight parameter distribution high rugg... See More ⇒

 6.3. Size:405K  infineon
 ikw75n60trev2 6g.pdf pdf_icon

IKW75N60H3

IKW75N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg... See More ⇒

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Specs: MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , RJH3047 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG .

Keywords - IKW75N60H3 transistor spec

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