All IGBT. IKW75N60H3 Datasheet

 

IKW75N60H3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKW75N60H3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75H603
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 470 nC
   Package: TO247

 IKW75N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKW75N60H3 Datasheet (PDF)

 ..1. Size:1935K  infineon
ikw75n60h3.pdf

IKW75N60H3 IKW75N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very lo

 6.1. Size:1972K  infineon
aikw75n60ct.pdf

IKW75N60H3 IKW75N60H3

AIKW75N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

 6.2. Size:853K  infineon
ikw75n60t.pdf

IKW75N60H3 IKW75N60H3

IKW75N60TTRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5sG Positive temperature coefficient in VCE(sat)E very tight parameter distribution high rugg

 6.3. Size:405K  infineon
ikw75n60trev2 6g.pdf

IKW75N60H3 IKW75N60H3

IKW75N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg

 6.4. Size:964K  infineon
ikw75n60ta.pdf

IKW75N60H3 IKW75N60H3

IKW75N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CGE Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5

Datasheet: MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , CRG40T60AK3HD , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG .

 

 
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