Справочник IGBT. IKW75N60H3

 

IKW75N60H3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IKW75N60H3
   Тип транзистора: IGBT + Diode
   Маркировка: K75H603
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 428 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 60 nS
   Coesⓘ - Выходная емкость, типовая: 240 pF
   Qgⓘ - Общий заряд затвора, typ: 470 nC
   Тип корпуса: TO247

 Аналог (замена) для IKW75N60H3

 

 

IKW75N60H3 Datasheet (PDF)

 ..1. Size:1935K  infineon
 ikw75n60h3.pdf

IKW75N60H3 IKW75N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very lo

 6.1. Size:1972K  infineon
 aikw75n60ct.pdf

IKW75N60H3 IKW75N60H3

AIKW75N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

 6.2. Size:853K  infineon
 ikw75n60t.pdf

IKW75N60H3 IKW75N60H3

IKW75N60TTRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5sG Positive temperature coefficient in VCE(sat)E very tight parameter distribution high rugg

 6.3. Size:405K  infineon
 ikw75n60trev2 6g.pdf

IKW75N60H3 IKW75N60H3

IKW75N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg

 6.4. Size:964K  infineon
 ikw75n60ta.pdf

IKW75N60H3 IKW75N60H3

IKW75N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CGE Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5

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