AOK60B60D1 Specs and Replacement
Type Designator: AOK60B60D1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 76 nS
Coesⓘ - Output Capacitance, typ: 369 pF
Package: TO247
AOK60B60D1 Substitution - IGBT ⓘ Cross-Reference Search
AOK60B60D1 datasheet
aok60b60d1.pdf
AOK60B60D1 TM 600V, 60A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 60A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒
aok60b65h1.pdf
AOK60B65H1 TM 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 60A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.88V C) High efficient turn-on di/dt controllability Very high switching speed Lo... See More ⇒
aok60b65hq3.pdf
AOK60B65HQ3 TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage High switching speed IC (TC=100 C) 60A Very low Vf and Qrr VCE(sat) (TJ=25 C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications PFC applic... See More ⇒
aok60b65h2al.pdf
AOK60B65H2AL TM 650V, 60A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 C) 60A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn... See More ⇒
Specs: MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , IKW50N60T , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , IRGP4063-E , IRG7PH42UD-EP .
Keywords - AOK60B60D1 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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