All IGBT. AOK60B60D1 Datasheet

 

AOK60B60D1 Datasheet and Replacement


   Type Designator: AOK60B60D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 76 nS
   Coesⓘ - Output Capacitance, typ: 369 pF
   Package: TO247
      - IGBT Cross-Reference

 

AOK60B60D1 Datasheet (PDF)

 ..1. Size:725K  aosemi
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AOK60B60D1

AOK60B60D1TM600V, 60A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 60Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 7.1. Size:590K  aosemi
aok60b65h1.pdf pdf_icon

AOK60B60D1

AOK60B65H1TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.88VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 7.2. Size:602K  aosemi
aok60b65hq3.pdf pdf_icon

AOK60B60D1

AOK60B65HQ3TM 650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100C) 60A Very low Vf and QrrVCE(sat) (TJ=25C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC applic

 7.3. Size:1105K  aosemi
aok60b65h2al.pdf pdf_icon

AOK60B60D1

AOK60B65H2ALTM650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100C) 60A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

Datasheet: MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , SGT50T65FD1PN , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , IRGP4063-E , IRG7PH42UD-EP .

History: IXXH100N60B3

Keywords - AOK60B60D1 transistor datasheet

 AOK60B60D1 cross reference
 AOK60B60D1 equivalent finder
 AOK60B60D1 lookup
 AOK60B60D1 substitution
 AOK60B60D1 replacement

 

 
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