Справочник IGBT. AOK60B60D1

 

AOK60B60D1 Даташит. Аналоги. Параметры и характеристики.


   Наименование: AOK60B60D1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 120 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.4 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 76 nS
   Coesⓘ - Выходная емкость, типовая: 369 pF
   Qgⓘ - Общий заряд затвора, typ: 75 nC
   Тип корпуса: TO247
     - подбор IGBT транзистора по параметрам

 

AOK60B60D1 Datasheet (PDF)

 ..1. Size:725K  aosemi
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AOK60B60D1

AOK60B60D1TM600V, 60A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 60Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 7.1. Size:590K  aosemi
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AOK60B60D1

AOK60B65H1TM650V, 60A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltageIC (TC=100 60AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.88VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 7.2. Size:602K  aosemi
aok60b65hq3.pdfpdf_icon

AOK60B60D1

AOK60B65HQ3TM 650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100C) 60A Very low Vf and QrrVCE(sat) (TJ=25C) 1.95V Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC applic

 7.3. Size:1105K  aosemi
aok60b65h2al.pdfpdf_icon

AOK60B60D1

AOK60B65H2ALTM650V, 60A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100C) 60A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.95V High efficient turn-on di/dt controllability Very high switching speed Low Turn

Другие IGBT... MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , SGT50T65FD1PN , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , IRGP4063-E , IRG7PH42UD-EP .

History: MMG100J060U | CM400DY-66H | DIM250PLM33-TL | SL25T120FL

 

 
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