RJH60F5BDPQ-A0 Specs and Replacement
Type Designator: RJH60F5BDPQ-A0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260.4 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.37 V @25℃
tr ⓘ - Rise Time, typ: 34 nS
Coesⓘ - Output Capacitance, typ: 122 pF
Package: TO247A RJH60F5BDPQ-A0 Substitution - IGBT ⓘ Cross-Reference Search
RJH60F5BDPQ-A0 datasheet
rjh60f5bdpq-a0.pdf
Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC... See More ⇒
r07ds0055ej rjh60f5dpk.pdf
Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒
rjh60f5dpk.pdf
Preliminary www.DataSheet4U.com RJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009 Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Max... See More ⇒
r07ds0326ej rjh60f5dpq.pdf
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒
Specs: APT47GA60JD40 , AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F7BDPQ-A0 , IRGP4062D-E , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG .
Keywords - RJH60F5BDPQ-A0 transistor spec
RJH60F5BDPQ-A0 cross reference
RJH60F5BDPQ-A0 equivalent finder
RJH60F5BDPQ-A0 lookup
RJH60F5BDPQ-A0 substitution
RJH60F5BDPQ-A0 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344