Справочник IGBT. RJH60F5BDPQ-A0

 

RJH60F5BDPQ-A0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60F5BDPQ-A0
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 260.4 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.37 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 34 nS
   Coesⓘ - Выходная емкость, типовая: 122 pF
   Тип корпуса: TO247A

 Аналог (замена) для RJH60F5BDPQ-A0

 

 

RJH60F5BDPQ-A0 Datasheet (PDF)

 ..1. Size:92K  renesas
 rjh60f5bdpq-a0.pdf

RJH60F5BDPQ-A0 RJH60F5BDPQ-A0

Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC

 7.1. Size:85K  renesas
 r07ds0055ej rjh60f5dpk.pdf

RJH60F5BDPQ-A0 RJH60F5BDPQ-A0

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 7.2. Size:219K  renesas
 rjh60f5dpk.pdf

RJH60F5BDPQ-A0 RJH60F5BDPQ-A0

Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max

 7.3. Size:88K  renesas
 r07ds0326ej rjh60f5dpq.pdf

RJH60F5BDPQ-A0 RJH60F5BDPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

 7.4. Size:85K  renesas
 rjh60f5dpq-a0.pdf

RJH60F5BDPQ-A0 RJH60F5BDPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I

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