AOB5B60D Datasheet and Replacement
Type Designator: AOB5B60D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 82.4 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 34 pF
Package: TO263
- IGBT Cross-Reference
AOB5B60D Datasheet (PDF)
aob5b60d.pdf

AOB5B60DTM600V, 5A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 5Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to o
aob5b65m1.pdf

AOT5B65M1/AOB5B65M1TM650V, 5A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXGH12N120A3 | 1MB08D-120 | IXGT40N60C2D1 | DM2G75SH6A | 1MB15D-060 | HGTD10N50F1 | IXGH64N60A3
Keywords - AOB5B60D transistor datasheet
AOB5B60D cross reference
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History: IXGH12N120A3 | 1MB08D-120 | IXGT40N60C2D1 | DM2G75SH6A | 1MB15D-060 | HGTD10N50F1 | IXGH64N60A3



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