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AOB5B60D Spec and Replacement


   Type Designator: AOB5B60D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 82.4 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Package: TO263

 AOB5B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOB5B60D specs

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AOB5B60D

AOB5B60D TM 600V, 5A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 5A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance to o... See More ⇒

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AOB5B60D

AOT5B65M1/AOB5B65M1 TM 650V, 5A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 5A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.57V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff... See More ⇒

Specs: NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , TGD30N40P , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD .

History: IXGH32N60BD1

Keywords - AOB5B60D transistor spec

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