AOTF10B60D PDF and Equivalents Search

 

AOTF10B60D Specs and Replacement

Type Designator: AOTF10B60D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 42 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.53 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 68 pF

Package: TO220F

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AOTF10B60D datasheet

 ..1. Size:728K  aosemi
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AOTF10B60D

AOTF10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒

 0.1. Size:721K  aosemi
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AOTF10B60D

AOTF10B60D2 TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance... See More ⇒

 6.1. Size:1325K  aosemi
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AOTF10B60D

AOTF10B65M1 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒

 6.2. Size:1182K  aosemi
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AOTF10B60D

AOTF10B65M2 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies... See More ⇒

Specs: STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , IRG4PC40W , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D .

Keywords - AOTF10B60D transistor spec

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