AOTF10B60D Даташит. Аналоги. Параметры и характеристики.
Наименование: AOTF10B60D
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 42 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.53 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 68 pF
Тип корпуса: TO220F
Аналог (замена) для AOTF10B60D
AOTF10B60D Datasheet (PDF)
aotf10b60d.pdf

AOTF10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aotf10b60d2.pdf

AOTF10B60D2TM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aotf10b65m1.pdf

AOTF10B65M1TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie
aotf10b65m2.pdf

AOTF10B65M2TM650V, 10A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltageIC (TC=100 10AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.6VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies
Другие IGBT... STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , NGTB75N65FL2 , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D .



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