All IGBT. T0510VB45E Datasheet

 

T0510VB45E IGBT. Datasheet pdf. Equivalent

Type Designator: T0510VB45E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 4100

Maximum Collector-Emitter Voltage |Vce|, V: 4500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.75

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 510

Maximum Junction Temperature (Tj), °C: 125

Rise Time, nS: 3300

T0510VB45E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

T0510VB45E Datasheet (PDF)

1.1. t0510vb45e.pdf Size:496K _igbt

T0510VB45E
T0510VB45E

Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT

Datasheet: NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , IRG4PC50FD , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E .

 


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