T0510VB45E Datasheet and Replacement
Type Designator: T0510VB45E
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 4100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 510 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 3300 nS
Package: MODULE
T0510VB45E substitution
T0510VB45E Datasheet (PDF)
t0510vb45e.pdf
Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT
Datasheet: NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , BT15T120ANF , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E .
History: FGH60N60UFDTU-F085 | VS-GA200SA60UP
Keywords - T0510VB45E transistor datasheet
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History: FGH60N60UFDTU-F085 | VS-GA200SA60UP
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